NOR-type flash memory device and manufacturing method thereof

Details NOR-type flash memory device and manufacturing method thereof NOR-type flash memory device and manufacturing method thereof

2005-12-23

2008-10-14

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S262000, C257S333000, C257SE21620

Reexamination Certificate

active

07435647

ABSTRACT:
A flash memory device that has a structure capable of preventing gate stack damage, and a method of manufacturing the same, is presented. The method includes forming a first photo resist pattern to open a common source region on a substrate where a shallow trench isolation region, a tunnel oxide layer, and a gate stack including a floating gate, a dielectric layer and a control gate are formed, removing an insulating layer in the shallow trench isolation region with using the first photo resist pattern as a mask, and removing the first photo resist pattern. The method further includes depositing a buffer oxide layer on surface of the substrate to cover the gate stack and the common source region, forming a second photo resist pattern on surface of the substrate including the buffer oxide layer to open the common source region, and injecting dopants to the common source region by using the second photo resist pattern as a mask.

REFERENCES:
patent: 5013674 (1991-05-01), Bergemont
patent: 5830794 (1998-11-01), Kusunoki et al.
patent: 6204125 (2001-03-01), Lee et al.
patent: 6548334 (2003-04-01), Pham et al.
patent: 6878588 (2005-04-01), Dong et al.
patent: 6885586 (2005-04-01), Chen et al.
patent: 2002/0126538 (2002-09-01), Chen
patent: 2003/0022500 (2003-01-01), Tang
patent: 2005/0199946 (2005-09-01), Hata et al.

Affiliated with

Also associated with

Rating

NOR-type flash memory device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with NOR-type flash memory device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and NOR-type flash memory device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4011941