Nonvolatile semiconductor storage device and its manufacturing m

Details Nonvolatile semiconductor storage device and its manufacturing m Nonvolatile semiconductor storage device and its manufacturing m

1998-06-12

2000-09-12

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, H01L 218247

Patent

active

061177296

ABSTRACT:
High-concentrated impurity regions 24 for isolation of bit line contacts, having the same conduction type as that of a semiconductor substrate 10, are formed in the semiconductor substrate 10 under field oxide films 12 in locations between individual drain regions of selection transistors provided in a plurality of NAND memory cells, respectively. The high-concentrated impurity regions 24 for isolation of bit line contacts are made in a common step of making high-concentrated impurity regions 26 for isolation of memory transistors, by implanting impurities into the semiconductor substrate 10 through slits 20a, 20b made in a first conductive film 20. The high-concentrated impurity regions 24 prevent the punch-through phenomenon between bit line contacts 42a, and improve the resistivity to voltage between the bit line contacts 42a.

REFERENCES:
patent: 5556798 (1996-09-01), Hong
patent: 5658812 (1997-08-01), Araki
patent: 5792670 (1998-08-01), Pio et al.
patent: 5852313 (1998-12-01), Hong et al.
patent: 5960283 (1999-09-01), Sato
patent: 5981340 (1999-11-01), Chang et al.
patent: 5989960 (1999-11-01), Fukase
patent: 5994186 (1999-11-01), Bergemont

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