Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-06
2009-02-03
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S264000, C438S596000, C438S587000
Reexamination Certificate
active
07485527
ABSTRACT:
There is provided a nonvolatile semiconductor storage device less subject to variances of electric characteristics among memory cells. A floating gate electrode provided on a substrate is made of two or more materials different in carrier trapping efficiency so as to accumulate carriers and thereby store data in the floating gate electrode. Thus a region without so large changes of the threshold voltage is produced, and the portion with a small change is used as the margin for circuit operations, thereby to eliminate variances among cells and realize high-speed operations.
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Kawashima Noriyuki
Taira Kenichi
Luu Chuong A.
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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