Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-10-02
1999-11-23
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 257319, 257320, H01L 29788
Patent
active
059905140
ABSTRACT:
A nonvolatile semiconductor memory device includes a plurality of floating gate type memory cell transistors having control gates. Word lines are integrally formed with the control gates, and boosting lines are self-aligned with the word lines. During programming, a first voltage is applied to a selected word line, and then a second voltage is applied to the boosting line over the selected word line. The voltage on the selected word line is then increased by capacitive coupling of the second voltage thereon, thereby programming at least one selected memory cell transistor. Therefore, a voltage lower than a program voltage is used on a selected word line, thereby reducing chip area and enhancing programming speed.
REFERENCES:
patent: 5859454 (1999-01-01), Choi et al.
patent: 5877980 (1999-03-01), Mang et al.
Choi, J.D., et al. A Novel Booster Plate Technology in High Density NAND Flash Memories for Voltage Scaling-Down and Zero Program Disturbance, 1996 Symposium on VLSI Technology, Digest of Technical Papers, Jun. 1996, pp.238-239.
Ahn Sung-tae
Choi Jung-dal
Samsung Electronics Co,. Ltd.
Tran Minh Loan
Tran Thien Fuong
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