Nonvolatile semiconductor memory device with twin-well

Details Nonvolatile semiconductor memory device with twin-well Nonvolatile semiconductor memory device with twin-well

2011-08-30

2011-08-30

Kebede, Brook (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21680

Reexamination Certificate

active

08008703

ABSTRACT:
A nonvolatile semiconductor memory device includes a first well of a first conductivity type, which is formed in a semiconductor substrate of the first conductivity type, a plurality of memory cell transistors that are formed in the first well, a second well of a second conductivity type, which includes a first part that surrounds a side region of the first well and a second part that surrounds a lower region of the first well, and electrically isolates the first well from the semiconductor substrate, and a third well of the second conductivity type, which is formed in the semiconductor substrate. The third well has a less depth than the second part of the second well.

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