Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-07
2006-11-07
Flynn, Nathan J. (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S142000, C438S197000, C438S257000, C257SE21689
Reexamination Certificate
active
07132330
ABSTRACT:
In a nonvolatile semiconductor memory device, an interpoly dielectric film composed of a nitrogen-introduced CVD SiO2film is used as the gate oxide films of MOS transistors in a low voltage region of a peripheral circuit region. Gate oxide films of MOS transistors in a high voltage region of the peripheral circuit region are composed of a laminate of the SiO2film and a nitrogen-introduced CVD SiO2film. This arrangement improves transistor characteristics and reliability of gate oxide films of the peripheral circuit MOS transistors. It is also possible to realize miniaturization and low voltage operation. Further, simplification of the production process is made possible.
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Antonelli, Terry Stout and Kraus, LLP.
Flynn Nathan J.
Quinto Kevin
Renesas Technology Corp.
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