Nonvolatile semiconductor memory device using source of a single

Details Nonvolatile semiconductor memory device using source of a single Nonvolatile semiconductor memory device using source of a single

1988-02-10

1989-08-15

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Precharge

36518901, 365222, G11C 1300

Patent

active

048581941

ABSTRACT:
A nonvolatile semiconductor memory device comprises memory cells each formed of a single memory transistor and can be accessed in a bit-by-bit manner to eliminate an erase cycle in a data write cycle. The memory device comprises precharging circuits for precharging word lines and bit lines in the data write cycle, tri-level V.sub.pp switches, in response to a data to be written and an output of X decoder, for applying to a selected word line a write voltage V.sub.pp when the data to be written is "1" while a ground potential when the data to be written is "0", and further applying remaining non-selected word lines the precharge voltage, and tri-level V.sub.pp switches, in response to a data to be written and an output of Y decoder, for applying to a selected bit line the ground potential when the data to be written is "1" while the write high-voltage V.sub.pp when the data to be written is "0", and further to the remaining non-selected bit lines the precharge voltage.

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