Nonvolatile semiconductor memory device to realize multi-bit...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21179, C257SE21422, C257SE21682, C438S201000, C438S264000, C438S265000

Reexamination Certificate

active

07666740

ABSTRACT:
A nonvolatile semiconductor memory device that realizes a multi-bit cell and a method for manufacturing the same includes manufacturing the nonvolatile semiconductor memory device to be capable of storing multi-bit data, for example, 4-bit data, in a single memory cell and, as a result, the integration degree of a NOR type nonvolatile semiconductor memory device can be improved.

REFERENCES:
patent: 5021999 (1991-06-01), Kohda et al.
patent: 5278439 (1994-01-01), Ma et al.
patent: 5714412 (1998-02-01), Liang et al.
patent: 5812449 (1998-09-01), Song
patent: 6097059 (2000-08-01), Yamada
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6248633 (2001-06-01), Ogura et al.
patent: 6424002 (2002-07-01), Kondo et al.
patent: 6566707 (2003-05-01), Sudo et al.
patent: 6593187 (2003-07-01), Hsieh
patent: 6686632 (2004-02-01), Ogura et al.
patent: 7045854 (2006-05-01), Osabe et al.
patent: 7268385 (2007-09-01), Nishizaka et al.
patent: 7499336 (2009-03-01), Liu et al.
patent: 2004/0264270 (2004-12-01), Iwata et al.
patent: 2007/0052007 (2007-03-01), Jung

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile semiconductor memory device to realize multi-bit... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device to realize multi-bit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device to realize multi-bit... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4209345

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.