Nonvolatile semiconductor memory device reduced in occupy area o

Details Nonvolatile semiconductor memory device reduced in occupy area o Nonvolatile semiconductor memory device reduced in occupy area o

1998-03-20

1999-03-30

Dinh, Son T.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

058896953

ABSTRACT:
A nonvolatile semiconductor memory cell includes four ferroelectric capacitors and six N channel MOS transistors. When data is to be written or read to or from a certain ferroelectric capacitor, corresponding two word lines are activated.

REFERENCES:
patent: 4888733 (1989-12-01), Mobley
patent: 5629888 (1997-05-01), Saito et al.
patent: 5751628 (1998-05-01), Hirano et al.
patent: 5754466 (1998-05-01), Arase
patent: 5768182 (1998-06-01), Hu et al.

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