Nonvolatile semiconductor memory device including access code ci

Static information storage and retrieval – Read/write circuit – Including signal comparison

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Details

34082531, 36518912, 365195, G11C 700, G11C 1140

Patent

active

052166333

ABSTRACT:
In a nonvolatile semiconductor memory device having a plurality of word lines, bit lines, sense lines, nonvolatile semiconductor memory cells, column selecting transistors, a page buffer circuit, data lines, an input driver/sense amplifier, an input buffer an input/output register and a comparator, a secret access code is defined in such a manner that a first secret access code is latched in the page buffer circuit, a second secret access code inputted by the input buffer is compared with the first secret access code read by the input/output register by bytes in the comparator, and if the first and second access codes match, the first secret access code latched in the page buffer is written in the cells of the row line designated in advance among the nonvolatile memory cells.

REFERENCES:
patent: 4864542 (1989-09-01), Oshima et al.

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