Nonvolatile semiconductor memory device having double...

Details Nonvolatile semiconductor memory device having double... Nonvolatile semiconductor memory device having double...

2007-10-30

2007-10-30

Nguyen, Tuan T. (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000

Reexamination Certificate

active

10913489

ABSTRACT:
The nonvolatile semiconductor memory device includes a non-planar active region with floating gates disposed on opposite sides of the active region. A control gate overlaps the floating gates and a portion of the active region.

REFERENCES:
patent: 4380057 (1983-04-01), Kotecha et al.
patent: 5045488 (1991-09-01), Yeh
patent: 5973356 (1999-10-01), Noble et al.
patent: 6329685 (2001-12-01), Lee
patent: 6744094 (2004-06-01), Forbes
patent: 6768158 (2004-07-01), Lee et al.
patent: 2003/0042531 (2003-03-01), Lee et al.
European Search Report, dated Mar. 23, 2005.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device having double... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device having double..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device having double... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3894299