Nonvolatile semiconductor memory device having a two-layer...

Details Nonvolatile semiconductor memory device having a two-layer... Nonvolatile semiconductor memory device having a two-layer...

2005-09-13

2005-09-13

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S261000

Reexamination Certificate

active

06943074

ABSTRACT:
In a memory cell, a gate oxide film is formed on a surface of semiconductor substrate and a first floating gate is formed on the gate oxide film. An insulating film is formed on a first floating gate and a second floating gate is formed on the insulating film. The first and second floating gates constitute a floating gate in the memory cell. An insulating film between the first floating gate and the second floating gate acts as an etching stopper when a polysilicon constituting the second floating gate is etched.

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