Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-04-30
2008-09-02
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S315000, C257S324000, C257S406000
Reexamination Certificate
active
07420256
ABSTRACT:
A nonvolatile semiconductor memory device includes a semiconductor substrate having a source region and a drain region, and a gate stack formed on the semiconductor substrate between and in contact with the source and drain regions. The gate stack includes, in sequential order from the substrate: a tunneling film; a first trapping material film doped with a first predetermined impurity, the first trapping material film having a higher dielectric constant than the nitride film (Si3N4); a first insulating film having a higher dielectric constant than a nitride film; and a gate electrode. Such a nonvolatile semiconductor memory device can effectively control the trap density according to the doping concentration, thereby increasing the write/erase speed of data at a low operating voltage.
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Chae Soo-doo
Hwang Hyun-sang
Kim Chung-woo
Kim Moon-kyung
Lee Jung-hyun
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Soward Ida M
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