Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-29
2005-03-29
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S314000, C257S315000, C257S316000
Reexamination Certificate
active
06872614
ABSTRACT:
A nonvolatile semiconductor memory device featuring a reducing operating voltage while maintaining a good disturbance characteristic and high speed in a write operation, including a gate insulating film and gate electrode stacked on a channel forming region of a semiconductor provided on the surface of a substrate and planarly dispersed charge storing means such as carrier traps in a nitride film or near the interface with the top insulating film, provided in the gate insulating film, the gate insulating film including an FN tunnel film having a dielectric constant larger than that of a silicon oxide film and exhibiting an FN electroconductivity, whereby the thickness of the gate insulating film, converted to that of a silicon oxide film, can be reduced and the voltage can be reduced. Further, to reduce the operation voltage, a pull-up electrode is provided near the gate electrode through the dielectric film and a pull-up gate bias circuit supplying a predetermined voltage to the same and boost the gate electrode by capacity coupling.
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Ha Nathan W.
Kananen Ronald P.
Pham Long
Rader & Fishman & Grauer, PLLC
Sony Corporation
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