Nonvolatile semiconductor memory device and method of fabricatin

Details Nonvolatile semiconductor memory device and method of fabricatin Nonvolatile semiconductor memory device and method of fabricatin

1981-12-15

1984-08-21

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Semiconductive

357 23, G11C 1140, H01L 2978

Patent

active

044674520

ABSTRACT:
A nonvolatile semiconductor memory device having a gate insulating film with a memory function. An impurity layer having the same conductivity type as that of the substrate region is formed in that substrate region, underlying the gate insulating film having a memory function, in which a channel is formed. The impurity layer has an impurity profile in which a peak of an impurity concentration is in the region distanced by 500 .ANG. or less from the surface of the substrate region and the impurity concentration is 1.times.10.sup.18 cm.sup.-3 or less in the region at the depth of 500 .ANG. or more.

REFERENCES:
patent: 4101921 (1978-07-01), Shimada et al.
patent: 4151538 (1979-04-01), Polinsky et al.
patent: 4198252 (1980-04-01), Hsu
patent: 4353083 (1982-10-01), Trudel et al.

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