Nonvolatile semiconductor memory device and method of...

Details Nonvolatile semiconductor memory device and method of... Nonvolatile semiconductor memory device and method of...

2011-08-02

2011-08-02

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S374000

Reexamination Certificate

active

07989880

ABSTRACT:
A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof.

REFERENCES:
patent: 2007/0252201 (2007-11-01), Kito et al.
patent: 2007-266143 (2007-10-01), None
U.S. Appl. No. 12/725,662, filed Mar. 17, 2010, Uenaka, et al.
U.S. Appl. No. 12/875,678, Sep. 3, 2010, Matsuda, et al.

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