Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-17
2010-12-28
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29309, C257SE27103, C257SE21180
Reexamination Certificate
active
07859066
ABSTRACT:
A nonvolatile semiconductor memory device has a plurality of memory strings each including a plurality of electrically rewritable memory cells serially connected. The memory string includes a columnar semiconductor portion extending in the vertical direction from a substrate, a first charge storage layer formed adjacent to the columnar semiconductor portion and configured to accumulate charge, a first block insulator formed adjacent to the first charge storage layer, and a first conductor formed adjacent to the first block insulator.
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Aochi Hideaki
Fukuzumi Yoshiaki
Katsumata Ryota
Kidoh Masaru
Kito Masaru
Fourson George
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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