Nonvolatile semiconductor memory device and method for manufactu

Details Nonvolatile semiconductor memory device and method for manufactu Nonvolatile semiconductor memory device and method for manufactu

1999-04-09

2000-12-26

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438302, 438525, 438919, H01L 218247

Patent

active

061658472

ABSTRACT:
A nonvolatile semiconductor memory device having a semiconductor substrate of a first conductive type, a floating gate and a control gate provided on the semiconductor substrate, at least a pair of impurity diffusion layers of a second conductive type defining source and drain and disposed in the semiconductor substrate in a spaced relation to each other so as to define a channel having a region covered with the floating gate and a region uncovered with the floating gate, the region uncovered with the floating gate defining a split gate, a first impurity diffusion layer region formed in the semiconductor substrate so as to be disposed at least at an area between the pair of diffusion layers, and a second impurity diffusion layer region having an impurity concentration lower than the first impurity diffusion layer region and formed in the semiconductor substrate so as to be disposed at the split gate.

REFERENCES:
patent: 4763299 (1988-08-01), Hazani
patent: 5042009 (1991-08-01), Kazerounian et al.
patent: 5776787 (1998-07-01), Keshtbod
patent: 5918137 (1999-06-01), Ng et al.
patent: 6051860 (2000-04-01), Odanaka et al.

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