Nonvolatile semiconductor memory device and method for...

Details Nonvolatile semiconductor memory device and method for... Nonvolatile semiconductor memory device and method for...

2011-04-19

2011-04-19

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S257000, C438S259000, C438S263000, C438S591000, C257SE21210, C257SE21267, C257SE21293, C257SE21423

Reexamination Certificate

active

07927953

ABSTRACT:
On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon nitride film and a silicon oxide film are formed in this order on an inner surface of the trench, and a channel silicon crystalline film is formed on the silicon oxide film. Next, a silicon oxide layer is formed at an interface between the silicon oxide film and the channel silicon crystalline film by performing thermal treatment in an oxygen gas atmosphere.

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Hirohisa et al., English Machine Translated of JP Publication No. 2007-317874, Dec. 6, 2007; (Machine Translated Dec. 1, 2010).
U.S. Appl. No. 12/679,991, filed Mar. 25, 2010, Fukuzumi et al.
Yasumasa Suizu, “A Method of Making Oxynitrides by Interface Nitridation Through Silicon”, Journal of The Electrochemical Society, 148 (4) F51-F55 (2001).

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