Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-08-05
2011-12-27
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C257S324000, C257SE29309
Reexamination Certificate
active
08084807
ABSTRACT:
A multilayer body is formed by alternately stacking electrode films serving as control gates and dielectric films in a direction orthogonal to an upper surface of a silicon substrate. Trenches extending in the word line direction are formed in the multilayer body and a memory film is formed on an inner surface of the trench. Subsequently, a silicon body is buried inside the trench, and a charge storage film and the silicon body are divided in the word line direction to form silicon pillars. This simplifies the configuration of memory cells in the bit line direction, and hence can shorten the arrangement pitch of the silicon pillars, decreasing the area per memory cell.
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Aochi Hideaki
Fukuzumi Yoshiaki
Ishiduki Megumi
Katsumata Ryota
Kidoh Masaru
Kabushiki Kaisha Toshiba
Mandala Victor A
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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