Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-31
2006-10-31
Hoang, Quoc (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S241000, C438S508000, C438S266000, C438S508000, C257S316000, C257SE21662, C257SE21210
Reexamination Certificate
active
07129135
ABSTRACT:
A first conductive film for forming a plurality of word lines is formed in a memory cell array formation region of a semiconductor substrate for a nonvolatile semiconductor memory device, and a second conductive film is formed in a semiconductor device formation region of the semiconductor substrate. Next, openings are formed in the first conductive film by a first dry etching process such that the word lines in the memory cell array formation region are located apart from one another. Thereafter, sidewall insulating films for the word lines are formed in the openings. Next, parts of the sidewall insulating films located adjacent to the ends of the word lines are removed by wet etching. Next, a part of the first conductive film located around a word line formation region is removed by a second dry etching process. The openings are formed in the first conductive film such that a part of the first conductive film remaining after the formation of the openings is continuous with the second conductive film, which is formed on an active region of the semiconductor substrate located outside the memory cell array formation region so as to be electrically connected to the active region.
REFERENCES:
patent: 5330924 (1994-07-01), Huang et al.
patent: 11-54730 (1999-02-01), None
patent: 2003-17596 (2003-01-01), None
Hoang Quoc
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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