Nonvolatile semiconductor memory device and manufacturing method

Details Nonvolatile semiconductor memory device and manufacturing method Nonvolatile semiconductor memory device and manufacturing method

1998-02-02

1999-10-26

Wojciechowicz, Edward

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438260, 438263, 438266, 438530, 438627, 438669, 438684, 438694, 257314, 257315, H01L 2972

Patent

active

059727500

ABSTRACT:
There are disclosed a nonvolatile semiconductor memory device, which is capable of maintaining a high capacitance ratio even when a memory cell is formed in a micronized size without increasing the number of manufacturing steps, and its manufacturing method. In a flash memory having buried diffusion layer type cells, a source region and drain regions and are formed in self alignment with a polycrystalline film pattern which has a polycrystalline silicon film having projecting and recessing parts in its upper surface.

REFERENCES:
patent: 5716871 (1998-02-01), Yamazaki et al.
patent: 5753950 (1998-05-01), Kojima

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