Nonvolatile semiconductor memory device and manufacturing...

Details Nonvolatile semiconductor memory device and manufacturing... Nonvolatile semiconductor memory device and manufacturing...

2007-03-27

2007-03-27

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S266000, C438S290000, C438S291000, C438S302000, C438S525000

Reexamination Certificate

active

10701497

ABSTRACT:
In a channel region between the source/drain diffusion layers, impurities of the same conductivity type as the well are doped in an area apart from the diffusion regions. By using as a mask the gate formed in advance, tilted ion implantation in opposite directions is performed to form the diffusion layers and heavily impurity doped region of the same conductivity type as the well in a self-alignment manner relative to the gate.

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