Nonvolatile semiconductor memory device and its...

Details Nonvolatile semiconductor memory device and its... Nonvolatile semiconductor memory device and its...

2007-03-13

2009-02-10

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S266000

Reexamination Certificate

active

07488646

ABSTRACT:
A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes element isolation/insulation films buried into a silicon substrate to isolate stripe-shaped element-forming regions. Formed on the substrate are a floating gate via a first gate insulating film and further a control gate via a second gate insulating film. Source and drain diffusion layers are formed in self-alignment with control gates. The second gate insulating film on the floating gate is divided and separated together with the floating gate by slits above the element isolation/insulation films into discrete portions of individual memory cells.

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