Nonvolatile semiconductor memory device and a method of fabricat

Details Nonvolatile semiconductor memory device and a method of fabricat Nonvolatile semiconductor memory device and a method of fabricat

1999-01-26

2000-10-24

Thomas, Tom

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438201, 438211, 438258, 438259, 438265, 438266, 438439, 438448, 438297, 257314, 257315, 257505, 257524, 257316, 257317, H01L 21336

Patent

active

06136648&

ABSTRACT:
A method of forming a nonvolatile semiconductor memory device of the present invention comprises: an isolation film formed on a semiconductor substrate of one conductivity type; a floating gate which is formed in an active region isolated by said isolation film so as to be disposed in a gap between adjacent isolation films and make each of end portions coincident with each end of said isolation film in a self-aligned manner; a tunnel oxide film which covers said floating gate; a control gate formed on said tunnel oxide film so as to comprise a region which overlaps said floating gate; a diffusion region of an opposite conductivity type and formed in a surface of the semiconductor substrate adjacent to said floating gate and the control gate.

REFERENCES:
patent: 5045488 (1991-09-01), Yeh
patent: 5753962 (1998-05-01), Jeng
patent: 5780892 (1998-07-01), Chen
patent: 5940706 (1999-08-01), Sung et al.

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