Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2008-08-08

2011-12-06

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29001

Reexamination Certificate

active

08072021

ABSTRACT:
A memory cell includes a floating gate electrode, a first inter-electrode insulating film and a control gate electrode. A peripheral transistor includes a lower electrode, a second inter-electrode insulating film and an upper electrode. The lower electrode and the upper electrode are electrically connected via an opening provided on the second inter-electrode insulating film. The first and second inter-electrode insulating films include a high-permittivity material, the first inter-electrode insulating film has a first structure, and the second inter-electrode insulating film has a second structure different from the first structure.

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Office Action issued Aug. 31, 2010, in korea Patent Application No. 10-2008-84586 (with English Translation).

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