Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2009-03-27

2011-12-06

Sandvik, Benjamin (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S320000, C257S326000, C257SE29300, C257SE27084, C257SE29018, C365S185170

Reexamination Certificate

active

08072020

ABSTRACT:
A first select transistor is connected to one end of a plurality of memory cell transistors that are serially connected. A second select transistor is connected to the other end of the serially connected memory cell transistors. A first impurity diffusion region is formed in a semiconductor substrate and constitutes a first main electrode of the first select transistor. A second impurity diffusion region is formed in the semiconductor substrate and constitutes a second main electrode of the second select transistor. A depth of the first impurity diffusion region is greater than a depth of the second impurity diffusion region.

REFERENCES:
patent: 5657270 (1997-08-01), Ohuchi et al.
patent: 5831903 (1998-11-01), Ohuchi et al.
patent: 5841161 (1998-11-01), Lim et al.
patent: 6081454 (2000-06-01), Ohuchi et al.
patent: 6835987 (2004-12-01), Yaegashi
patent: 6949794 (2005-09-01), Yaegashi
patent: 7026241 (2006-04-01), Goda et al.
patent: 7122869 (2006-10-01), Yaegashi
patent: 7274075 (2007-09-01), Yaegashi
patent: 2003/0094635 (2003-05-01), Yaegashi
patent: 2007/0036000 (2007-02-01), Kutsukake et al.
patent: 2007/0171720 (2007-07-01), Noguchi
patent: 2008/0012080 (2008-01-01), Yaegashi
patent: 3-295098 (1991-12-01), None
patent: 1998-073727 (1998-11-01), None
patent: 10-0533308 (2003-12-01), None
Office Action issued Nov. 9, 2010, in Korean Patent Application No. 10-2009-46932 (with English translation).

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