Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2005-04-06

2008-08-05

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257SE29129

Reexamination Certificate

active

07408219

ABSTRACT:
In a nonvolatile semiconductor memory device, and a method of fabricating the same, the nonvolatile semiconductor memory device includes a cell doping region and source/drain regions in a semiconductor substrate, the cell doping region being doped as a first conductive type, a channel region disposed between the source/drain regions in the semiconductor substrate, a tunnel doping region of the first conductive type formed in a predetermined region of an upper portion of the cell doping region, the tunnel doping region being doped in a higher concentration than that of the cell doping region, a tunnel insulating layer formed on a surface of the semiconductor substrate on the tunnel doping region, a gate insulating layer surrounding the tunnel insulating layer and covering the channel region and the cell doping region exposed beyond the tunnel doping region, and a gate electrode covering the tunnel insulating layer and on the gate insulating layer.

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patent: 6190973 (2001-02-01), Berg et al.
patent: 6376875 (2002-04-01), Kakoschke et al.
patent: 6534364 (2003-03-01), Erdeljac et al.
patent: 10-056090 (1998-02-01), None
patent: 1999-0055792 (1999-07-01), None

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