Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1994-10-31

1995-08-01

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Semiconductive

365185, 365226, 36518904, 365218, 365900, 257314, 257371, G11C 700, H01L 2702

Patent

active

054385423

ABSTRACT:
In a flash memory EEPROM, a memory cell MC is formed in a P-type semiconductor substrate. A peripheral transistor TR is formed in an N-type well. Another peripheral transistor TR is formed in a P-type well. The P-type well is by turn formed an N-type well and electrically insulated from the substrate. The substrate is typically provided with a metal back structure and its substrate voltage is set to predetermined voltages respectively for data erasure, data storage and data retrieval. With such an arrangement, the level of voltage stress with which the device is loaded during data erasure can be remarkably reduced to allow a down-sizing and an enhanced quality to be realized for the device.

REFERENCES:
patent: 4879679 (1989-11-01), Kikuda et al.
patent: 4907058 (1990-03-01), Sakai
patent: 5043788 (1991-08-01), Omoto et al.
patent: 5051953 (1991-09-01), Kitazawa et al.
patent: 5077691 (1991-12-01), Hadoad et al.
patent: 5243559 (1993-09-01), Murai

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