Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-02-21

2006-02-21

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S185270

Reexamination Certificate

active

07002865

ABSTRACT:
A nonvolatile semiconductor memory device includes: a first bit cell including a first MOS transistor whose source and drain are connected to form a first control gate and a second MOS transistor which has a floating gate in common with the first MOS transistor; a second bit cell including a third MOS transistor whose source and drain are connected to form a second control gate and a fourth MOS transistor which has a floating gate in common with the third MOS transistor; and a differential amplifier which receives input signals from drains of the respective second and fourth MOS transistors.

REFERENCES:
patent: 5029131 (1991-07-01), Vancu
patent: 5754477 (1998-05-01), Forbes
patent: 6246088 (2001-06-01), Chang
patent: 6614684 (2003-09-01), Shukuri et al.

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