Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-03-21

2006-03-21

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S276000

Reexamination Certificate

active

07015535

ABSTRACT:
A nonvolatile semiconductor memory device includes a plurality of memory cells. A couple of bits of data can be stored in the memory cell, the stored data being controlled according to resistance values of first and second variable resistance regions. One of the plurality of memory cells shares its first diffusion layer with an adjacent memory cell and shares its second diffusion layer with another adjacent memory cell. The first diffusion layers of the plurality of memory cells are coupled to each other with a first conductive line extending in a first direction. The second diffusion layers of the plurality of memory cells are coupled to each other with a second conductive line extending in the first direction. The gate electrodes of the plurality of memory cells are coupled to each other with a third conductive line extending in a second direction, which is orthogonal to the first direction.

REFERENCES:
patent: 4935791 (1990-06-01), Namaki et al.
patent: 5978258 (1999-11-01), Manning
patent: 6816414 (2004-11-01), Prinz
patent: 2511485 (1996-04-01), None

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