Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1999-06-14
2000-08-22
Nguyen, Tan T.
Static information storage and retrieval
Read/write circuit
Differential sensing
36518511, 3651852, 36518521, G11C 700
Patent
active
061082597
ABSTRACT:
A semiconductor memory device includes a plurality of memory cell blocks having a plurality of memory cells, a plurality of sense amplifiers coupled to the memory cell blocks, and a reference block for generating a reference value and for providing the reference value to the sense amplifiers. Each memory cell block is coupled to at least one of the sense amplifiers. The reference block includes a reference cell for holding a predetermined reference value and a current circuit responsive to a state of the reference cell.
REFERENCES:
patent: 5088064 (1992-02-01), Tsukude
patent: 5754475 (1998-05-01), Bill et al.
patent: 5943286 (1999-08-01), Oritz
patent: 5982666 (1999-11-01), Campardo
Choi Soo-Hwan
Lim Young-ho
Nguyen Tan T.
Samsung Electronics Co,. Ltd.
LandOfFree
Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-588698