Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1989-03-29

1989-11-28

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Differential sensing

36518909, 3652335, G11C 700

Patent

active

048842419

ABSTRACT:
A differential amplifier having input terminals connected to first and second nodes lying between the main nonvolatile memory cell section and the nonvolatile dummy cell circuit is used as a sense amplifier. The first and second nodes are pre-charged to a high potential level prior to the data readout operation. The memory cell section and the dummy cell circuit are set in the capacitively balanced condition, thereby making it possible to correctly read out data at a high speed.

REFERENCES:
patent: 4480321 (1984-10-01), Aoyama
patent: 4661928 (1987-04-01), Yasuoka
patent: 4758995 (1988-07-01), Sato
Saito et al., "A Programmable 80 ns 1 Mb CMOS EPROM," ISSCC Digest of Technical Papers, pp. 176-177, Feb. 1985.

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