Nonvolatile semiconductor memory and method of manufacturing...

Details Nonvolatile semiconductor memory and method of manufacturing... Nonvolatile semiconductor memory and method of manufacturing...

2010-09-30

2011-12-06

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S289000, C257SE21135

Reexamination Certificate

active

08071444

ABSTRACT:
A nonvolatile semiconductor memory has a semiconductor substrate, a first insulating film formed on a channel region on a surface portion of the semiconductor substrate, a charge accumulating layer formed on the first insulating film, a second insulating film formed on the charge accumulating layer, a control gate electrode formed on the second insulating film, and a third insulating film including an Si—N bond that is formed on a bottom surface and side surfaces of the charge accumulating layer.

REFERENCES:
patent: 6200858 (2001-03-01), Kokubu
patent: 6472281 (2002-10-01), Doi et al.
patent: 7060559 (2006-06-01), Ozawa et al.
patent: 2005/0179069 (2005-08-01), Wakamiya
patent: 2006/0240619 (2006-10-01), Ozawa et al.
patent: 01-134936 (1989-05-01), None
patent: 7-249697 (1995-09-01), None
patent: 10-163348 (1998-06-01), None
patent: 2006-80150 (2006-07-01), None
Takeuchi et al; “Semiconductor Memory Device and Method for Manufacturing the Same”; U.S. Appl. No. 11/870,839, filed Oct. 11, 2007.
Aoki et al.; “Semiconductor Device and Method of Fabricating the Same”; U.S. Appl. No. 11/902,752, filed Sep. 25, 2007.
Akahori et al.; “Nonvolatile Semiconductor Memory Device”; U.S. Appl. No. 11/870,793, filed Oct. 11, 2007.
Notification of Reasons for Rejection issued by the Korean Patent Office on Nov. 23, 2009, for Korean Patent Application No. 10-2008-0017327, and English-language translation thereof.
Notification of Reasons for Rejection issued by the Japanese Patent Office on May 27, 2011, for Japanese Patent Application No. 2007-046934, and English-language translation thereof.

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