Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-03-09
2011-12-27
Ahmadi, Mohsen (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S201000, C438S258000, C438S264000, C438S587000, C438S594000, C257SE21180, C257SE21209, C257SE21613, C257SE21625, C257SE21645
Reexamination Certificate
active
08084324
ABSTRACT:
A nonvolatile semiconductor memory includes a memory cell transistor including a first floating gate electrode layer formed on a first tunneling insulating film, a first inter-gate insulating film, a first and a second control gate electrode layer, and a first metallic silicide film; a high voltage transistor including a high voltage gate electrode layer formed on the high voltage gate insulating film, a second inter-gate insulating film having an aperture, a third and a fourth control gate electrode layer, and a second metallic silicide film; a low voltage transistor including a second floating gate electrode layer formed on the second tunneling insulating film, a third inter-gate insulating film having an aperture, a fifth and a sixth control gate electrode layer, and a third metallic silicide film; and a liner insulating film directly disposed on a first source and drain region of the memory cell transistor, a second source and drain region of the low voltage transistor, and a third source and drain region of the high voltage transistor.
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Arai Fumitaka
Ichige Masayuki
Matsunaga Yasuhiko
Sato Atsuhiro
Sugimae Kikuko
Ahmadi Mohsen
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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