Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-07
1997-06-03
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, H01L 2976, H01L 2994, H01L 29788
Patent
active
056357478
ABSTRACT:
A nonvolatile semiconductor memory with a unit cell structure suitable for high speed operation and a low power supply voltage. The nonvolatile semiconductor memory includes a switching circuit including block select transistors connected by its respective terminal to a corresponding bit line. This switching circuit transmits a signal only when a string to which the switching circuit corresponds is selected. A second active region having a different impurity concentration from a first active region constituting source and drain regions of memory transistors is formed at a substrate contact portion of a bit line contact portion where the memory string and bit line are connected. The impurity concentration of the second active region is lower than that of the first active region.
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Cho Sung-Hee
Hwang Sang-Ki
Jang Cheol-Ung
Ko Young-Wi
Lee Hyong-Gon
Ngo Ngan V.
Samsung Electronics Co,. Ltd.
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