Nonvolatile semiconductor device with floating gate structure

Details Nonvolatile semiconductor device with floating gate structure Nonvolatile semiconductor device with floating gate structure

2006-01-24

2006-01-24

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S257000

Reexamination Certificate

active

06989303

ABSTRACT:
A method of manufacturing a semiconductor memory integrated circuit intended to improve properties and reliability of its peripheral circuit includes the step of forming a tunnel oxide film (21a) in the cell array region, gate oxide film (21b) for a high-voltage circuit and gate oxide film (21c) for a low-voltage circuit both in the peripheral circuit to respectively optimum values of thickness, and covering them with a first-layer polycrystalline silicon film (22). After that, device isolation grooves (13) are formed and buried with a device isolation insulating film (14). The first-layer polycrystalline silicon film (24) is a non-doped film, and after device isolation, a second-layer polycrystalline silicon film (24) is doped with phosphorus in the cell array region to form floating gates made of the first-layer polycrystalline silicon film (22) and the second-layer polycrystalline silicon film (24). In the peripheral circuit, gate electrodes are made of a multi-layered film including the first-layer polycrystalline silicon film (22), second-layer polycrystalline silicon film (24) and third-layer polycrystalline silicon film28,and impurities are ion implanted thereafter to respective transistor regions under respectively optimum conditions.

REFERENCES:
patent: 5994733 (1999-11-01), Nishioka et al.
patent: 6281050 (2001-08-01), Sakagami
patent: 6342715 (2002-01-01), Shimizu et al.
patent: 6403421 (2002-06-01), Ikeda et al.
patent: 6417051 (2002-07-01), Takebuchi
patent: 6441426 (2002-08-01), Fukumoto et al.
patent: 6486508 (2002-11-01), Lee

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor device with floating gate structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor device with floating gate structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor device with floating gate structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3583094