Nonvolatile read only memory device

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

Patent

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Details

365207, 365210, G11C 700

Patent

active

044942192

ABSTRACT:
A nonvolatile read only memory detects a time varying change of the amount of data written in the memory cell transistor using a circuit for supplying a constant potential which is higher than the threshold voltage of a reference cell transistor and which is independent of a power source voltage used for reading out connected to the gate of the reference cell transistor.

REFERENCES:
patent: 4223394 (1980-09-01), Pathak et al.

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