Nonvolatile phase change memory cell having a reduced...

Details Nonvolatile phase change memory cell having a reduced... Nonvolatile phase change memory cell having a reduced...

2006-11-16

2010-06-01

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE29002, C438S102000, C438S103000

Reexamination Certificate

active

07728318

ABSTRACT:
A nonvolatile memory cell having a contact area between a phase-change material such as a chalcogenide and a heat source which is smaller than photolithographic limits is described. To form this cell, a conductive or semiconductor pillar is exposed at a dielectric surface and recessed by selective etch. A thin, conformal layer of a spacer material is deposited on the dielectric top surface, the pillar top surface, and the sidewalls of the recess, then removed from horizontal surfaces by anistropic etch, leaving a spacer on the sidewalls defining a reduced volume within the recess. The phase change material is deposited within the spacer, having a reduced contact area to the underlying conductive or semiconductor pillar.

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