Nonvolatile memory with self-aligned floating gate and fabricati

Details Nonvolatile memory with self-aligned floating gate and fabricati Nonvolatile memory with self-aligned floating gate and fabricati

1999-02-23

2000-10-31

Whitehead, Jr, Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438296, 438424, H01L 21336

Patent

active

06140182&

ABSTRACT:
Nonvolatile memory cell and process in which isolation oxide regions are formed on opposite sides of an active area in a substrate to a height above the substrate on the order of 80 to 160 percent of the width of the active area, a gate oxide is formed over the active area, a first layer of silicon is deposited on the gate oxide and along the sides of the isolation oxide regions to form a floating gate having a bottom wall which is substantially coextensive with the gate oxide and side walls having a height on the order of 80 to 160 percent of the width of the bottom wall, a dielectric film is formed on the floating gate, and a second layer of silicon is deposited on the dielectric film and patterned to form a control gate which is capacitively coupled with the floating gate.

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