Nonvolatile memory using resistance material

Details Nonvolatile memory using resistance material Nonvolatile memory using resistance material

2008-10-02

2010-11-16

Mai, Son L (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S227000, C365S230060

Reexamination Certificate

active

07835199

ABSTRACT:
Provided is a nonvolatile memory using a resistance material. In embodiments of the invention, a PRAM is configured to apply a step-down voltage to wordlines during a standby mode. Aspects of the present invention thus provide a nonvolatile memory with reduced standby current. Additionally, embodiments of the invention allow for faster transition from a standby state to an active state.

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