Nonvolatile memory using resistance material

Details Nonvolatile memory using resistance material Nonvolatile memory using resistance material

2008-10-01

2010-12-14

Mai, Son L (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S230030

Reexamination Certificate

active

07852666

ABSTRACT:
A nonvolatile memory using a resistance material includes first and second memory-cell blocks having different block address information and each including a plurality of nonvolatile memory cells; a global bitline common to the first and second memory-cell blocks; first and second local bitlines corresponding to the first and second memory-cell blocks, respectively, and coupled to each other; and a common bitline selection circuit interposed between the first and second memory-cell blocks and coupled between the first and second local bitlines and the global bitline.

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