Nonvolatile memory, memory system, and method of driving

Static information storage and retrieval – Read/write circuit – Particular write circuit

Reexamination Certificate

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Details

C365S189011, C365S204000, C365S163000, C365S148000, C365S230060

Reexamination Certificate

active

07936619

ABSTRACT:
Provided are a nonvolatile memory and related method of programming same. The nonvolatile memory includes a memory cell array with a plurality of nonvolatile memory cells and a write circuit. The write circuit is configured to write first logic state data to a first group of memory cells during a first program operation using a first internally generated step-up voltage, and second logic state data to a second group of memory cells during a second program operation using an externally supplied step-up voltage.

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patent: 7719886 (2010-05-01), Philipp et al.
patent: 2006/0067154 (2006-03-01), Bedeschi et al.
patent: 2008/0158960 (2008-07-01), Sekar et al.
patent: 2008/0174360 (2008-07-01), Hsu
patent: 2007226883 (2007-09-01), None
patent: 1020060043897 (2006-05-01), None
patent: 1020070005823 (2007-01-01), None

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