Static information storage and retrieval – Read/write circuit – Particular write circuit
Reexamination Certificate
2011-05-03
2011-05-03
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Particular write circuit
C365S189011, C365S204000, C365S163000, C365S148000, C365S230060
Reexamination Certificate
active
07936619
ABSTRACT:
Provided are a nonvolatile memory and related method of programming same. The nonvolatile memory includes a memory cell array with a plurality of nonvolatile memory cells and a write circuit. The write circuit is configured to write first logic state data to a first group of memory cells during a first program operation using a first internally generated step-up voltage, and second logic state data to a second group of memory cells during a second program operation using an externally supplied step-up voltage.
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Cho Woo-Yeong
Kim Du-Eung
Lee Kwang-Jin
Park Joon-min
Seo Hui-Kwon
Hidalgo Fernando N
Ho Hoai V
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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