Nonvolatile memory devices with trenched side-wall...

Details Nonvolatile memory devices with trenched side-wall... Nonvolatile memory devices with trenched side-wall...

2008-06-24

2008-06-24

Picardat, Kevin M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S321000, C438S263000, C438S264000

Reexamination Certificate

active

07391071

ABSTRACT:
A nonvolatile memory device includes a semiconductor substrate, a device isolation layer, a tunnel insulation layer, a floating gate, a buried floating gate, and a control gate. A trench is in the substrate that defines an active region of the substrate adjacent to the trench. A device isolation layer is on the substrate along the trench. A tunnel insulation layer is on the active region of the substrate. A floating gate is on the tunnel insulation layer opposite to the active region of the substrate. A buried floating gate is on the device isolation layer in the trench. An intergate dielectric layer is on and extends across the floating gate and the buried floating gate. A control gate is on the intergate dielectric layer and extends across the floating gate and the buried floating gate.

REFERENCES:
patent: 6222769 (2001-04-01), Maruyama et al.
patent: 2001/0046736 (2001-11-01), Fu
patent: 11-054732 (1999-02-01), None
patent: 10-1997-0081075 (1999-07-01), None
patent: 1020030048957 (2003-06-01), None

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