Nonvolatile memory devices with multiple layers having band...

Details Nonvolatile memory devices with multiple layers having band... Nonvolatile memory devices with multiple layers having band...

2011-07-05

2011-07-05

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S321000, C257S411000, C257SE29165, C257SE29300

Reexamination Certificate

active

07973355

ABSTRACT:
A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.

REFERENCES:
patent: 7154143 (2006-12-01), Jung
patent: 2006/0180851 (2006-08-01), Lee et al.
patent: 2006/0258090 (2006-11-01), Bhattacharyya et al.
patent: 2006/0261401 (2006-11-01), Bhattacharyya
patent: 2007/0281426 (2007-12-01), Wang
patent: 10-0579844 (2006-05-01), None
patent: 10-0684900 (2007-02-01), None
English language abstract of KR 10-2005-0043135 dated May 11, 2005.
English language abstract of KR 10-2006-0108352 dated Oct. 17, 2006.

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