Nonvolatile memory devices that use resistance materials and...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257SE29001

Reexamination Certificate

active

07952163

ABSTRACT:
A nonvolatile memory device, a method of fabricating the nonvolatile memory device and a processing system including the nonvolatile memory device. The nonvolatile memory device may include a plurality of internal electrodes that extend in a direction substantially perpendicular to a face of a substrate, a plurality of first external electrodes that extend substantially in parallel with the face of the substrate, and a plurality of second external electrodes that also extend substantially in parallel with the face of the substrate. Each first external electrode is on a first side of a respective one of the internal electrodes, and each second external electrode is on a second side of a respective one of the internal electrodes. These devices also include a plurality of variable resistors that contact the internal electrodes, the first external electrodes and the second external electrodes.

REFERENCES:
patent: 2007/0159868 (2007-07-01), Sugita et al.
patent: 2009/0141547 (2009-06-01), Jin et al.
patent: 2010/0328988 (2010-12-01), Nagashima et al.
patent: 2004-158804 (2004-06-01), None
patent: 1020050071954 (2005-07-01), None
patent: 1020060001051 (2006-01-01), None

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