Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-16
2010-11-30
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257SE21662
Reexamination Certificate
active
07842991
ABSTRACT:
A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.
REFERENCES:
patent: 4982309 (1991-01-01), Shepherd
patent: 2003/0086835 (2003-05-01), Suzawa et al.
patent: 2003/0218222 (2003-11-01), Wager et al.
patent: 2005/0051828 (2005-03-01), Park et al.
patent: 2005/0247921 (2005-11-01), Lee et al.
patent: 2005/0282635 (2005-12-01), Aoki
patent: 2006/0022245 (2006-02-01), Jeong et al.
patent: 2006/0054950 (2006-03-01), Baek et al.
patent: 1684747 (2005-10-01), None
patent: 1691334 (2005-11-01), None
patent: 1 484 799 (2004-12-01), None
European Search Report dated Mar. 19, 2009, for corresponding European Patent Application No. 07102983.9.
Chen et al., “Perovskite RRAM Devices with Metal/Insulator/PCMO/Metal Heterostructures” Non-Volatile Memory Technology Symposium, Nov. 7, 2005, pp. 125-128, XP010854264.
Hyunjun et al., Excellent Resistance Switching Characteristics of Pt/Single-crystal Nb-Doped SrTiO3Schottky Junction, Non-Volatile Semiconductor Memory Workshop, 2006. Feb. 12, 2006, pp. 88-89, XP010916678.
Office Action for corresponding Chinese Patent Application No. 200610165950.5 dated Jun. 19, 2009.
Chinese Office Action dated Feb. 5, 2010 with English translation for corresponding Chinese Application No. 200610165950.5.
English Translation of Office Action dated Jun. 19, 2009 for corresponding Chinese Patent Application No. 200610165950.5.
Cho Choong-rae
Cho Sung-Il
Lee Eun-hong
Yoo In-kyeong
Ahmed Selim
Harness & Dickey & Pierce P.L.C.
Pert Evan
Samsung Electronics Co,. Ltd.
LandOfFree
Nonvolatile memory devices including oxygen-deficient metal... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile memory devices including oxygen-deficient metal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory devices including oxygen-deficient metal... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4173619