Nonvolatile memory devices including arrays of discrete floating

Details Nonvolatile memory devices including arrays of discrete floating Nonvolatile memory devices including arrays of discrete floating

1996-12-18

1998-05-05

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257314, 257315, 36518516, 36518517, 36518518, H01L 29788, H01L 27108

Patent

active

057478481

ABSTRACT:
Nonvolatile memory devices include a substrate, and an array of field isolation regions in the substrate. The array of field isolation regions define a plurality of spaced apart first active regions in the substrate, which extend along the substrate in a first direction. The array of field isolation regions also define a plurality of spaced apart second active regions in the substrate, which extend along the substrate in a second direction which is orthogonal to the first direction. An array of floating gate isolation regions is also provided. A respective one of the floating gate isolation regions is on a respective one of the array of field isolation regions. The floating gate isolation regions extend on the corresponding field isolation region along the first direction. The array of floating gate isolation regions can prevent damage to the substrate when the floating gate is defined using the control gate as a mask.

REFERENCES:
patent: 5303187 (1994-04-01), Yu
patent: 5432129 (1995-07-01), Hodges
patent: 5589699 (1996-12-01), Araki

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