Nonvolatile memory devices and methods of forming the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Reexamination Certificate

active

08080843

ABSTRACT:
Provided are nonvolatile memory devices and methods of forming nonvolatile memory devices. Nonvolatile memory devices include a device isolation layer that defines an active region in a substrate. Nonvolatile memory devices further include a first insulating layer, a nonconductive charge storage pattern, a second insulating layer and a control gate line that are sequentially disposed on the active region. The charge storage pattern includes a horizontal portion and a protrusion disposed on an upper portion of an edge of the horizontal portion.

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