Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-03
2011-12-20
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
08080843
ABSTRACT:
Provided are nonvolatile memory devices and methods of forming nonvolatile memory devices. Nonvolatile memory devices include a device isolation layer that defines an active region in a substrate. Nonvolatile memory devices further include a first insulating layer, a nonconductive charge storage pattern, a second insulating layer and a control gate line that are sequentially disposed on the active region. The charge storage pattern includes a horizontal portion and a protrusion disposed on an upper portion of an edge of the horizontal portion.
REFERENCES:
patent: 6171909 (2001-01-01), Ding et al.
patent: 7041554 (2006-05-01), Lee et al.
patent: 7445994 (2008-11-01), Lee et al.
patent: 2004/0217414 (2004-11-01), Kim
patent: 2005/0136601 (2005-06-01), Jang et al.
patent: 2006/0108711 (2006-05-01), Yu
patent: 2006/0166436 (2006-07-01), Korber
patent: 2006/0187711 (2006-08-01), Jang
patent: 2006/0208302 (2006-09-01), Shin et al.
patent: 2007/0228450 (2007-10-01), Li et al.
patent: 2008/0265304 (2008-10-01), Lee et al.
patent: 1020070002381 (2004-06-01), None
patent: 1020070051967 (2005-07-01), None
patent: 1020070000664 (2006-01-01), None
patent: 1020070008969 (2007-01-01), None
Jung Won-Seok
Park Jin-Taek
Myers Bigel & Sibley & Sajovec
Nguyen Dao H
Nguyen Tram H
Samsung Electronics Co,. Ltd.
LandOfFree
Nonvolatile memory devices and methods of forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile memory devices and methods of forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory devices and methods of forming the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4310976