Nonvolatile memory devices and methods of forming the same

Details Nonvolatile memory devices and methods of forming the same Nonvolatile memory devices and methods of forming the same

2006-12-27

2009-08-11

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C257S500000, C257S501000, C257S502000, C257S503000, C257S903000, C257SE27064, C257SE21658, C257SE21620

Reexamination Certificate

active

07572684

ABSTRACT:
Nonvolatile memory devices, and methods of forming the same are disclosed. A memory device includes a substrate having a cell region, a low voltage region and a high voltage region. A ground selection transistor, a string selection transistor and a cell transistor are in the cell region, a low voltage transistor is in the low voltage region, and a high voltage transistor is in the high voltage region. A common source contact is on the ground selection transistor and a low voltage contact is on the low voltage transistor. A bit line contact is on the string selection transistor, a high voltage contact is on the high voltage transistor, and a bit line is on the bit line contact. A first insulating layer is on the substrate, and a second insulating layer is on the first insulating layer. The common source contact and the first low voltage contact extend to a height of the first insulating layer, and the bit line contact and the first high voltage contact extend to a height of the second insulating layer.

REFERENCES:
patent: 4859619 (1989-08-01), Wu et al.
patent: 5780909 (1998-07-01), Hayashi
patent: 5990507 (1999-11-01), Mochizuki et al.
patent: 6051462 (2000-04-01), Ohno
patent: 6114767 (2000-09-01), Nagai et al.
patent: 6117725 (2000-09-01), Huang
patent: 6124199 (2000-09-01), Gambino et al.
patent: 6140672 (2000-10-01), Arita et al.
patent: 6197639 (2001-03-01), Lee et al.
patent: 6218197 (2001-04-01), Kasai
patent: 6268633 (2001-07-01), Pio et al.
patent: 6291335 (2001-09-01), Schnabel et al.
patent: 6320234 (2001-11-01), Karasawa et al.
patent: 6326651 (2001-12-01), Manabe
patent: 6353242 (2002-03-01), Watanabe et al.
patent: 6372518 (2002-04-01), Nasu et al.
patent: 6376307 (2002-04-01), Kim
patent: 6376879 (2002-04-01), Mori et al.
patent: 6465826 (2002-10-01), Kasai
patent: 6475858 (2002-11-01), Sugiyama et al.
patent: 6500677 (2002-12-01), Bergmann et al.
patent: 6501138 (2002-12-01), Karasawa
patent: 6552357 (2003-04-01), Akita
patent: 6627928 (2003-09-01), Peschiaroli et al.
patent: 6717206 (2004-04-01), Hsu et al.
patent: 6734477 (2004-05-01), Moise et al.
patent: 6800883 (2004-10-01), Furuya et al.
patent: 6852585 (2005-02-01), Herzum et al.
patent: 6908837 (2005-06-01), Taniguchi et al.
patent: 7011999 (2006-03-01), Minami et al.
patent: 7145200 (2006-12-01), Saito et al.
patent: 7166901 (2007-01-01), Inoue et al.
patent: 7256092 (2007-08-01), Chen et al.
patent: 7285838 (2007-10-01), Ohkawa et al.
patent: 2001/0019157 (2001-09-01), Pio et al.
patent: 2001/0028080 (2001-10-01), Himeno et al.
patent: 2002/0075720 (2002-06-01), Akita
patent: 2002/0153548 (2002-10-01), Mizutani et al.
patent: 2003/0222302 (2003-12-01), Saito et al.
patent: 2004/0088658 (2004-05-01), Minda
patent: 2004/0142526 (2004-07-01), Bae
patent: 2004/0169250 (2004-09-01), Kobayashi
patent: 2005/0093047 (2005-05-01), Goda et al.
patent: 2005/0142756 (2005-06-01), Park et al.
patent: 2005/0194639 (2005-09-01), Negoro et al.
patent: 2006/0027864 (2006-02-01), Negoro et al.
patent: 2006/0113547 (2006-06-01), Shin
patent: 2006/0138568 (2006-06-01), Taniguchi et al.
patent: 2006/0223269 (2006-10-01), Honma
patent: 2007/0018226 (2007-01-01), Kamigaichi et al.
patent: 2007/0109848 (2007-05-01), Sugimae et al.
patent: 2007/0132033 (2007-06-01), Wu et al.
patent: 2007/0187749 (2007-08-01), Sugimae et al.
patent: 2007/0200166 (2007-08-01), Nakagawa
patent: 2008/0067573 (2008-03-01), Jang et al.
patent: 2008/0084728 (2008-04-01), Sakuma et al.
patent: 2001-313374 (2001-11-01), None
patent: 1999-0056024 (1999-07-01), None
patent: 100260559 (2000-04-01), None
patent: 10-2005-0086291 (2005-08-01), None
patent: 10-2005-0086294 (2005-08-01), None
patent: 10-2005-0108141 (2005-11-01), None
patent: 1020060000022 (2006-01-01), None

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